Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
JFET — The junction gate field effect transistor (JFET or JUGFET) is the simplest type of field effect transistor. Like other transistors, it can be used as an electronically controlled switch. It is also used as a voltage controlled resistance. An… … Wikipedia
n-channel junction field-effect transistor — sandūrinis lauko tranzistorius su n kanalu statusas T sritis radioelektronika atitikmenys: angl. n channel JFET; n channel junction field effect transistor vok. n Kanal Sperrschicht Feldeffekttransistor, m rus. n канальный полевой транзистор с p… … Radioelektronikos terminų žodynas
Transistor de efecto campo — P channel N channel Símbolos esquemáticos para los JFETs canal n y canal p. G=Puerta(Gate), D=Drenador(Drain) y S=Fuente(Source). El transistor de efecto campo (Field Effect Transistor o FET, en inglés) es en realidad una familia de transistores… … Wikipedia Español
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Common source — Figure 1: Basic N channel JFET common source circuit (neglecting biasing details). Figure 2: Basic N channel JFET common source circuit with source degeneration … Wikipedia
Common drain — In electronics, a common drain amplifier, also known as a source follower, is one of three basic single stage field effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit the gate terminal of the… … Wikipedia
Lambda diode — The term refers to the shape of the V/I curve of the device, which resembles the Greek letter λ (lambda) .Lambda diodes work at higher voltage than tunnel diodes. Whereas a typical tunnel diode [ [http://www.datasheetarchive.com/pdf/84703.pdf… … Wikipedia
n-Kanal-Sperrschicht-Feldeffekttransistor — sandūrinis lauko tranzistorius su n kanalu statusas T sritis radioelektronika atitikmenys: angl. n channel JFET; n channel junction field effect transistor vok. n Kanal Sperrschicht Feldeffekttransistor, m rus. n канальный полевой транзистор с p… … Radioelektronikos terminų žodynas
n-канальный полевой транзистор с p-n-переходом — sandūrinis lauko tranzistorius su n kanalu statusas T sritis radioelektronika atitikmenys: angl. n channel JFET; n channel junction field effect transistor vok. n Kanal Sperrschicht Feldeffekttransistor, m rus. n канальный полевой транзистор с p… … Radioelektronikos terminų žodynas
